# Kris's Research Notes

## February 7, 2011

### Model Parameters — Part 3.

Filed under: GaAs Simulations — Kris Reyes @ 8:03 am

This is a follow-up to this post.

Recall in the previous post, we noted for the low temperature/high As over pressure regime, we observed excess As. We noted at the end that this could be addressed by either lowering the $As-As$ bond strength or introducing a sufficiently small desorption potential for $As(0)$ which would effectively disallow excess As.
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I am currently in the process of fitting the surface termination phase diagram (see this post) to experiments. While doing this, I have learned more about the model. Specifically, I more clearly understand how the $\gamma_{2,4}, \gamma_{2,3}, \gamma_{4,2}, \gamma_{3,2}$ and $\mu_{As}$ parameters affect crystal growth — where $\gamma_{i,j} = \gamma(Ga(i), As(j))$.