Kris's Research Notes

November 4, 2010

GaAs Crystal Growth: Phase Diagram pt. 2

Filed under: GaAs Simulations — Kris Reyes @ 7:03 pm

This is a follow-up of this post.

I was worried that the asymmetry between the surface Gallium bond strength \gamma(Ga(2), As(4))  (which was set 0.7 eV in the previous post) and the surface Arsenic bond strength \gamma(Ga(4), As(2)) (which I varied between 0.85 eV and 0.95 eV). In these trials, I made these two bond strengths more symmetric. Specifically, I fixed \gamma(Ga(2), As(4)) = 0.95 eV, and I varied \gamma(Ga(4), A(s2)) \in \left\{0.85, 0.95\right\} eV. I also varied Gallium flux r_{\downarrow Ga} \in \left\{ 1, 5 \right\} monolayers/second. Here are the four resulting contour plots. (Note the horizontal label is incorrect. It should read r_{\downarrow As}/r_{\downarrow Ga}.)

\gamma(Ga(4), As(2)) = 0.85 eV. r_{\downarrow Ga} = 1 monolayer per second

\gamma(Ga(4), As(2)) = 0.85 eV. r_{\downarrow Ga} = 5 monolayer per second

\gamma(Ga(4), As(2)) = 0.95 eV. r_{\downarrow Ga} = 1 monolayer per second

\gamma(Ga(4), As(2)) = 0.95 eV. r_{\downarrow Ga} = 5 monolayer per second

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